for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 86 hmc476sc70 / 476sc70e sige hbt gain block mmic amplifier, dc - 6 ghz v01.0110 general description functional diagram typical applications electrical speci cations, vs= 5v, rbias= 56 ohm, t a = +25 c features the hmc476sc70(e) is a sige heterojunction bipolar transistor (hbt) gain block mmic smt ampli ers covering dc to 6 ghz. this industry standard sc70 packaged ampli er can be used as a cascadable 50 ohm rf/if gain stage as well as a lo or pa driver with up to +12 dbm output power. the hmc476sc70(e) offers 20 db of gain with a +24 dbm output ip3 at 850 mhz while requiring only 35 ma from a single positive supply. the darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +12 dbm gain: 20 db output ip3: +24 dbm cascadable 50 ohm i/os single supply: +5v to +12v industry standard sc70 package the hmc476sc70(e) is ideal for: ? cellular / pcs / 3g ? wibro / wimax / 4g ? fixed wireless & wlan ? catv, cable modem & dbs ? microwave radio & test equipment parameter min. typ. max. units gain dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 16 13 9 19 16 12 db db db gain variation over temperature dc - 6 ghz 0.008 0.012 db/ c input return loss dc - 4 ghz 4.0 - 6.0 ghz 20 15 db db output return loss dc - 4 ghz 4.0 - 6.0 ghz 20 13 db db reverse isolation dc - 6 ghz 18 db output power for 1 db compression (p1db) 0.5 - 4.0 ghz 4.0 - 6.0 ghz 9.0 8.0 12.0 11.0 dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) 0.5 - 4.0 ghz 4.0 - 6.0 ghz 24 22 dbm dbm noise figure 0.5 - 4.0 ghz 4.0 - 6.0 ghz 2.5 3.0 db db supply current (icq) 35 42 ma
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 87 output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature hmc476sc70 / 476sc70e sige hbt gain block mmic amplifier, dc - 6 ghz v01.0110 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 012345678 s21 s11 s22 response (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 4 8 12 16 20 24 0123456 +25c +85c -40c gain (db) frequency (ghz) 0 2 4 6 8 0123456 +25 c +85 c -40 c noise figure (db) frequency (ghz)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 88 gain, power & oip3 vs. supply voltage for constant icc = 35 ma @ 850 mhz p1db vs. temperature psat vs. temperature output ip3 vs. temperature icc vs. vcc over temperature for fixed vs = 5v, r bias = 56 ohms hmc476sc70 / 476sc70e sige hbt gain block mmic amplifier, dc - 6 ghz v01.0110 0 3 6 9 12 15 18 0123456 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 3 6 9 12 15 18 0123456 +25c +85c -40c psat (dbm) frequency (ghz) 10 14 18 22 26 30 0123456 +25c +85c -40c ip3 (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 5678910 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vs (vdc) 30 32 34 36 38 40 42 2.7 2.8 2.9 3 3.1 3.2 icc (ma) vcc (v) +85 c +25 c -40 c
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 89 outline drawing absolute maximum ratings collector bias voltage (vcc) +6v collector bias current (icc) 45 ma rf input power (rfin)(vcc = +2.4v) +5 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 7.75 mw/c above 85 c) 0.504 w thermal resistance (junction to lead) 129 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c part number package body material lead finish msl rating package marking hmc476sc70 low stress injection molded plastic sn/pb solder msl1 [1] 476 hmc476sc70e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 476e [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c package information electrostatic sensitive device observe handling precautions hmc476sc70 / 476sc70e sige hbt gain block mmic amplifier, dc - 6 ghz v01.0110 notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. lead material: copper alloy 3. lead plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. dimension does not include moldflash of 0.25mm per side. 7. all ground leads must be soldered to pcb rf ground.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 90 pin number function description interface schematic 1, 2, 4, 5 gnd these pins must be connected to rf/dc ground. 3rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 6 rfout rf output and dc bias (vcc) for the output stage. application circuit pin descriptions hmc476sc70 / 476sc70e sige hbt gain block mmic amplifier, dc - 6 ghz v01.0110 recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 5200 5800 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 6.8 nh 3.3 nh c1, c2 0.01 f 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf supply voltage (vs) 5v 8v 10v 12v r bias v alue 56 130 180 240 r bias p ower r ating 1/8 w 1/4 w 1/4 w 1/2 w note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 35 ma, rbias= (vs - vcc) / icc
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 91 evaluation pcb the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 118038 [1] item description j1 - j2 pcb mount sma connector j3 - j4 dc pin c1 - c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 f capacitor, tantalum r1 50 ohm resistor, 1210 pkg. l1 18 nh inductor, 0603 pkg. u1 hmc476sc70(e) pcb [2] 117360 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc476sc70 / 476sc70e sige hbt gain block mmic amplifier, dc - 6 ghz v01.0110
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